Pulsed laser deposition of VO2 thin films
نویسندگان
چکیده
High quality vanadium dioxide ~VO2! thin films have been successfully deposited by pulsed laser deposition without postannealing on ~0001! and ~101̄0! sapphire substrates. X-ray diffraction reveals that the films are highly oriented with ~010! planes parallel to the surface of the substrate. VO2 thin films on ~0001! and ~101̄0! substrates show semiconductor to metal transistions with electrical resistance changes as large as 4310, 10, respectively. Thin films on ~101̄0! substrate have a transition at as low as 55 °C with a hysteresis less than 1 °C. These transition properties are comparable with single crystal VO2. © 1994 American Institute of Physics.
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تاریخ انتشار 1996